发明名称 Method for non-destructive readout and apparatus for use with the method
摘要 A method for determining a logic state of a memory cell in a data storage device, wherein the cell stores data in the form of an electrical polarization state in a capacitor containing a polarizable material, includes applying a time-dependent small signal voltage over the capacitor, and recording at least one component of a generated small-signal current response over said capacitor. Correlation analysis is performed on the response based on a reference signal derived from the time dependent small signal voltage to determine the logic state of the memory cell. An apparatus performing a phase comparison according to this method includes a phase detector connected with a memory cell for detecting at least one phase in the response signal. The apparatus is configured to determine the logic state of the memory cell by comparing the detected phase and a phase reference signal.
申请公布号 US6804139(B2) 申请公布日期 2004.10.12
申请号 US20020169381 申请日期 2002.07.02
申请人 THIN FILM ELECTRONICS ASA 发明人 NORDAL PER-ERIK
分类号 G11C7/00;G11C11/22;(IPC1-7):G11C11/22 主分类号 G11C7/00
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