发明名称 Paraelectric thin film material and method statement of government interest
摘要 A dielectric thin film material and method of preparation in which precursors are provided to form barium strontium titanate with lanthanum (La) added as a dopant. The precursors and La dopant are mixed with a solvent forming a solution which is deposited on a substrate to form a continuous film composition. In various embodiments, the dielectric thin film has a composition of (1-y)Ba0.6Sr0.4TiO3-(y)La, where y=0 to 10-mol. The thin film material has dielectric and insulating properties suitable for tunable microwave applications.
申请公布号 US6803134(B1) 申请公布日期 2004.10.12
申请号 US20020157937 申请日期 2002.05.31
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY 发明人 COLE MELANIE W.;HUBBARD CLIFFORD;NGO ERIC
分类号 B32B9/00;C04B35/468;C23C18/12;H01G4/12;H01L21/02;H01L21/316;(IPC1-7):B32B9/00 主分类号 B32B9/00
代理机构 代理人
主权项
地址