发明名称 |
Paraelectric thin film material and method statement of government interest |
摘要 |
A dielectric thin film material and method of preparation in which precursors are provided to form barium strontium titanate with lanthanum (La) added as a dopant. The precursors and La dopant are mixed with a solvent forming a solution which is deposited on a substrate to form a continuous film composition. In various embodiments, the dielectric thin film has a composition of (1-y)Ba0.6Sr0.4TiO3-(y)La, where y=0 to 10-mol. The thin film material has dielectric and insulating properties suitable for tunable microwave applications.
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申请公布号 |
US6803134(B1) |
申请公布日期 |
2004.10.12 |
申请号 |
US20020157937 |
申请日期 |
2002.05.31 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY |
发明人 |
COLE MELANIE W.;HUBBARD CLIFFORD;NGO ERIC |
分类号 |
B32B9/00;C04B35/468;C23C18/12;H01G4/12;H01L21/02;H01L21/316;(IPC1-7):B32B9/00 |
主分类号 |
B32B9/00 |
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