发明名称 Inductance measuring method
摘要 One end of an inductor is connected to a drain of a P-channel type MOS transistor. A source of source of MOS transistor is connected to an electric power source which supplies a voltage Vdd. The other end of inductor is connected via a dummy capacitor to a ground. Furthermore, a dummy resistor is connected between a drain of MOS transistor and the ground. The dummy resistor has the same resistance as that of a parasitic resistor existing between the inductor and the MOS transistor. Another dummy capacitor is connected between the dummy resistor and the ground. A current measuring device is connected between a source of MOS transistor and the ground. A current measuring device is connected between a source of MOS transistor and the ground. A current measuring device is connected between a source of MOS transistor and the ground. A current measuring device is connected between a source of MOS transistor and the ground.
申请公布号 US6803772(B2) 申请公布日期 2004.10.12
申请号 US20030396350 申请日期 2003.03.26
申请人 RENESAS TECHNOLOGY CORP. 发明人 KUNIKIYO TATSUYA
分类号 G01R27/26;(IPC1-7):G01R27/28;G01R31/26 主分类号 G01R27/26
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