MAGNETIC MEMORY FOR PERFORMING WRITING OPERATION THEREOF, ESPECIALLY USING THERMOELECTRONS AS CURRENT CARRIERS

摘要

PURPOSE: A magnetic memory for performing a writing operation with small current without crosstalk and a writing method thereof are provided to increase efficiency of magnetization reversal due to spin injection by using thermoelectrons as current carriers instead of conventional conduction electrons. CONSTITUTION: A magnetic memory includes a spin polarization unit, a thermoelectron generation unit, and a magnetic layer. The spin polarization unit(S) is used for spin-polarizing electrons to form a writing current(I). The thermoelectron generation unit(H) is used for converting the electrons into thermoelectrons. The magnetic layer(F) is used for reversing magnetization by the thermoelectrons. A predetermined voltage is applied to the thermoelectron generation unit in order to obtain a nonlinear response characteristic of electric current flowing.