| 摘要 |
Semiconductor device production, by forming a stop zone (21) in a wafer before cathode-side treatment, wafer thinning and anode production, is new. Production of a semiconductor device, having a cathode (3) and an anode (5), comprises introducing a stop zone (21) into a wafer, treating the cathode-side of the wafer, reducing the wafer thickness from the opposite side of the wafer and producing the anode on this opposite side. An Independent claim is also included for a semiconductor device having a cathode (3), an anode (5) and a stop zone (21) adjacent the anode, the stop zone having a doping profile which increases towards the anode and which is cut off at the anode. |
