| 摘要 |
PURPOSE: A method of manufacturing a semiconductor device with a capacitor is provided to improve the adhesion between an interlayer dielectric and a capacitor lower electrode without a liner by using a nitrified layer. CONSTITUTION: A first and second insulating layer(19,20) are sequentially formed on a semiconductor substrate. A contact plug(22) is formed in the first and second insulating layer. A third and fourth insulating layer(25,26) are formed thereon. An opening portion(28) for exposing the contact plug is formed in the third and fourth insulating layer. A modified layer(29) is selectively formed at sides of the opening portion by nitrifying partially the fourth insulating layer. A capacitor lower electrode layer(30) is formed along the upper surface of the resultant structure. The modified layer has a good adhesion for the lower electrode layer. In addition, the second and third insulating layer have a good adhesion for the lower electrode layer compared to the first and fourth insulating layer.
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