发明名称 |
Fabrication of a semiconductor device having a dielectric grid in a material with a high dielectric permittivity, which includes a low temperature deposition of silicon-germanium |
摘要 |
<p>The fabrication of a semiconductor device having a dielectric grid of a material with a high dielectric permittivity includes a stage (40) of deposition, directly on the grid dielectric, of a first layer of Si1-xGex with 0.5 less than x = 1, at a temperature essentially low with respect to the temperature of deposition of poly-Si by thermal chemical vapour deposition. An independent claim is also claimed for the semiconductor device thus fabricated.</p> |
申请公布号 |
FR2853452(A1) |
申请公布日期 |
2004.10.08 |
申请号 |
FR20030004008 |
申请日期 |
2003.04.01 |
申请人 |
STMICROELECTRONICS SA |
发明人 |
COSNIER VINCENT;MORAND YVES;KERMARREC OLIVIER;BENSAHEL DANIEL;CAMPIDELLI YVES |
分类号 |
H01L21/28;H01L29/49;H01L29/51;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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