PHASE CHANGE MEMORY DEVICE AND FORMING METHOD THEREOF TO IMPROVE CURRENT DENSITY

摘要

PURPOSE: A phase change memory device and a forming method thereof are provided to improve current density by forming a V-shaped contact region between the first electrode and a phase change material layer. CONSTITUTION: A phase change memory device includes a phase change material layer(325) including a horizontal part and a vertical part perpendicular to the horizontal part, the first electrode(319) connected to a front end of vertical part of the phase change material layer, and the second electrode(327) connected to the horizontal part of the phase change material layer. The front end of vertical part of the phase change material layer is formed with a V-shaped end.