| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to prevent collapse of a storage node and to enhance capacitance by double exposing using dipole X and Y and using a bar-type mask. CONSTITUTION: A contact plug(160) is formed on a substrate(100) by selectively etching an interlayer dielectric(120) and an etch stop layer(140). The first polysilicon layer, an insulating layer and a hard mask layer are sequentially formed on the resultant structure. A hard mask pattern is formed by double exposing using dipole X and Y. The first polysilicon pattern(180a) and an insulating pattern are stacked by etching the insulating layer and the first polysilicon layer using the hard mask pattern. The second polysilicon layer(160) is formed at both sidewalls of the stacked structure. By removing the insulating pattern, a bar-type storage node(270) including the first and second polysilicon layer is formed.
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