METHOD OF FABRICATING SEMICONDUCTOR DEVICE FOR EFFECTIVELY RESTRAINING SHORT CHANNEL EFFECT DUE TO MINIATURIZATION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of fabricating a semiconductor device is provided to restrain effectively a short channel effect due to miniaturization of the semiconductor device by forming locally an impurity region on a channel region. CONSTITUTION: A source region(101), a drain region(102), and a channel region(103) are formed within a crystalline semiconductor layer on a substrate. A plurality of impurity regions(104) are locally formed on the channel region. A gate insulating layer and a gate electrode are formed on the channel regions. Impurity elements added to the impurity regions within the channel region are used for shifting an energy bandwidth of the channel region. The impurity regions have conductivity opposite to conductivity of the source and drain regions.