发明名称 |
DRAM HAVING LOW POWER CONSUMPTION FUNCTION, IN WHICH THE CAPACITANCE OF A BIT LINE PAIR IS REDUCED |
摘要 |
PURPOSE: A DRAM having a low power consumption function is provided to reduce an operation current of a memory cell array by reducing capacitance of a bit line pair. CONSTITUTION: The DRAM includes a memory cell array(20), and a plurality of word lines(21) connected to rows or columns of the memory cell array. A plurality of bit line pairs(22) cross the plurality of word lines vertically and are connected to the memory cell array to transfer data. A sense amplifier(23) senses and amplifies a potential difference variation of the bit line pair. And a switch(24) is comprised in the bit line pair.
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申请公布号 |
KR20040085630(A) |
申请公布日期 |
2004.10.08 |
申请号 |
KR20030020393 |
申请日期 |
2003.04.01 |
申请人 |
YOU, HOON |
发明人 |
YOU, HOON |
分类号 |
G11C11/401;(IPC1-7):G11C11/401 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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