发明名称 DRAM HAVING LOW POWER CONSUMPTION FUNCTION, IN WHICH THE CAPACITANCE OF A BIT LINE PAIR IS REDUCED
摘要 PURPOSE: A DRAM having a low power consumption function is provided to reduce an operation current of a memory cell array by reducing capacitance of a bit line pair. CONSTITUTION: The DRAM includes a memory cell array(20), and a plurality of word lines(21) connected to rows or columns of the memory cell array. A plurality of bit line pairs(22) cross the plurality of word lines vertically and are connected to the memory cell array to transfer data. A sense amplifier(23) senses and amplifies a potential difference variation of the bit line pair. And a switch(24) is comprised in the bit line pair.
申请公布号 KR20040085630(A) 申请公布日期 2004.10.08
申请号 KR20030020393 申请日期 2003.04.01
申请人 YOU, HOON 发明人 YOU, HOON
分类号 G11C11/401;(IPC1-7):G11C11/401 主分类号 G11C11/401
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