METHOD FOR FORMING BOTTOM ELECTRODE OF SEMICONDUCTOR DEVICE TO SIMPLIFY AND STABILIZE PLASMA PROCESS

摘要

PURPOSE: A method for forming a bottom electrode of a semiconductor device is provided to simplify and stabilize a plasma process by forming a dual electrode type ruthenium/ruthenium oxide. CONSTITUTION: An insulating layer(12) is formed on a semiconductor substrate(11). A ruthenium oxide electrode(13) is deposited on the insulating layer by using a sputtering method under oxygen atmosphere. A ruthenium electrode(14) is deposited on an upper surface of the ruthenium oxide layer by in-situ. A ferroelectric layer(15) is formed on an upper surface of the ruthenium electrode by using a sputtering method. A thermal process for the ferroelectric layer is performed. A pattern is formed on a top electrode part of the ferroelectric layer. A top electrode(16) is formed on the pattern by using the sputtering method.