METHOD FOR PATTERNING INTERLAYER DIELECTRIC AND SEMICONDUCTOR DEVICE FABRICATED THEREBY TO PREVENT COLLAPSE OF PHOTORESIST PATTERN

摘要

PURPOSE: A method for patterning an interlayer dielectric and a semiconductor device fabricated thereby are provided to prevent a collapsing phenomenon of a photoresist pattern by using the photoresist pattern having a broken part as an etching mask to etch an interlayer dielectric. CONSTITUTION: An isolation layer(110) is formed on a semiconductor substrate(100) in order to define a plurality of active regions. A plurality of gate patterns(120) are formed on the isolation layer and the active regions. The gate patterns are formed with gate conductive patterns(122) and capping patterns(124). An interlayer dielectric is formed thereon. A photoresist pattern having a broken part is formed on the semiconductor substrate including the interlayer dielectric. The interlayer dielectric is etched by using the photoresist pattern as an etching mask.