| 摘要 |
PURPOSE: A dielectric composition comprising glass frits in the K2O-Na2O-Li2O-B2O3-SiO2 system and dielectric ceramics in the BaO-TiO2 system is provided, which has high dielectric constant, large Q value at high frequency and low temperature sintering. CONSTITUTION: The high-k dielectric composition comprises 84-97wt.% of BaO-nTiO2(n=4.0-4.5) dielectric ceramics for high dielectric constant and 3-16wt.% of Li2O-B2O3-SiO2 glass frits composed of 7-40wt.% of SiO2, 33-60wt.% of B2O3 and 18-41wt.% of Li2O for low temperature sintering, wherein Li2O is replaced with 0-50wt.% of K2O and 0-50wt.% of Na2O, and glass frits have 6.4-8.5 of dielectric constant, 350-510 deg.C of glass transition temperature and 0.3-1.0% of dielectric loss. Also dielectric composition contains dielectric ceramics in the system (Ba,Pb)Nd2O3-TiO2 or BaO-(Bi,Nd)2O3-TiO2, replacing BaO-nTiO2. The resultant dielectric composition, having 25-35 of dielectric constant, 6000-20000GHz of Q value(Qxf) and more than 99% of density under 875deg.C, is applied to resonators and circuit boards in the high frequency range.
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