发明名称 |
METHOD FOR FORMING TEST PATTERN OF SEMICONDUCTOR DEVICE TO EASILY TEST BRIDGE OF CAPACITOR |
摘要 |
PURPOSE: A method for forming a test pattern of a semiconductor device is provided to easily test bridge of a capacitor by forming the test pattern same to layout of a storage electrode in a main chip. CONSTITUTION: A word line(15) and the first landing plug are formed on a substrate. An interlayer dielectric is formed on the resultant structure. A bit line(19) is formed to overlap the word line. The second landing plug contact hole(30) with line shape is formed vertically to the bit line. The second landing plug(31) is formed between the bit lines. A storage electrode(21) with a line pattern is then formed to connect an active region(13) through the second and first landing plug. A metal line(35) is formed to connect the line pattern.
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申请公布号 |
KR20040085911(A) |
申请公布日期 |
2004.10.08 |
申请号 |
KR20030020764 |
申请日期 |
2003.04.02 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, HYEONG GI |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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