HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF TO REDUCE BREAKDOWN VOLTAGE AND LEAKAGE CURRENT

摘要

PURPOSE: A high voltage device and a method for manufacturing the same are provided to reduce breakdown voltage and leakage current by using a silicon bulk as a source and a drain for high voltage. CONSTITUTION: A trench is formed in a semiconductor substrate(100) having a desired lower structure. A sidewall(102') is formed at inner walls of the trench. A gate electrode is then formed by sequentially forming a gate oxide layer(103) and a gate polysilicon layer in the trench and patterning. A source(105) and a drain(106) are formed at a silicon bulk region located at the sidewalls of the trench.