MOSFET DEVICE WITH ULTRA FINE CHANNEL AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A MOSFET device with a ultra fine channel and a method for manufacturing the same are provided to shorten the effective channel length by controlling the thickness of a doped second silicon oxide layer. CONSTITUTION: A channel region is formed on a single crystalline silicon layer(14) of an SOI(Silicon-On-Insulator) substrate. A source/drain region is provided with a deep junction region(42) and a shallow junction region(44) formed in the silicon layer. A first silicon oxide pattern(20a) doped with the first concentration of the first dopant is formed on the silicon layer to contact the deep junction region. A second silicon oxide spacer(40a) doped with the second concentration of the second dopant is formed on the silicon layer to contact the shallow junction region. A T-shaped gate electrode(60a) is formed on the channel region. A gate insulating layer(50a) is formed between the channel region and the gate electrode.