METHOD FOR FORMING THIN FILM OF SEMICONDUCTOR DEVICE TO CONTROLS EASILY REACTION CONDITIONS

摘要

PURPOSE: A method for forming a thin film of a semiconductor device is provided to activate only particular reaction materials and controls easily reaction conditions by introducing reaction materials onto the semiconductor substrate within a chamber. CONSTITUTION: A semiconductor substrate(110) is loaded into a chamber. A plurality of reaction materials are introduced onto the semiconductor substrate. Molecules of the reaction materials are activated by providing necessary energy. A thin film is formed on an upper surface of the semiconductor substrate by activating the molecules of the reaction materials.