发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which is improved in power consumption, packaging density, stability, stable time and the like. SOLUTION: In the semiconductor integrated circuit device equipped with a logic circuit including MIS (metal insulator semiconductor) transistors formed on a semiconductor substrate, a substrate bias control circuit is provided for balancing a first substrate bias voltage Vbp0 which is applied to a first conductive MIS transistor, and a second substrate bias voltage Vbn0 which is applied to a second conductive MIS transistor. The substrate bias control circuit includes first and second control circuits for controlling threshold voltages of MIS transistors comprising the logic circuit, and an oscillation circuit that includes the MIS transistors formed on the semiconductor substrate, and is configured to vary a frequency of an oscillated output. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004282776(A) 申请公布日期 2004.10.07
申请号 JP20040129490 申请日期 2004.04.26
申请人 RENESAS TECHNOLOGY CORP 发明人 MIZUNO HIROYUKI;MIYAZAKI SUKEYUKI;ISHIBASHI KOICHIRO
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L27/088;H03K19/094;H03K19/096;(IPC1-7):H03K19/096;H01L21/823 主分类号 H01L27/04
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