发明名称 Film bulk acoustic resonator and film bulk acoustic resonator circuit
摘要 In a film bulk acoustic resonator, a multi-layered member is placed on a substrate. The multi-layered member has: a common electrode; a piezoelectric layer formed on the common electrode; a first electrode which is formed on the piezoelectric layer, and which is used for a resonator; a second electrode which surrounds the edge of the first electrode with forming a gap therebetween, and which is used for a spurious suppressing element; a first wiring through which an electric power is supplied to the first electrode; and a second wiring through which an electric power is supplied to the second electrode. In the film bulk acoustic resonator, the piezoelectric layer includes a ferroelectric film, and a polarization state of the ferroelectric film corresponding to the resonator is different from a polarization state of the ferroelectric film corresponding to the spurious suppressing element.
申请公布号 US2004195937(A1) 申请公布日期 2004.10.07
申请号 US20040813298 申请日期 2004.03.31
申请人 MATSUBARA SHOGO;HORIO HIDEAKI;MIZUYAMA YOSUKE 发明人 MATSUBARA SHOGO;HORIO HIDEAKI;MIZUYAMA YOSUKE
分类号 H01L41/09;H01L41/187;H03H9/02;H03H9/17;H03H9/56;(IPC1-7):H01L41/047 主分类号 H01L41/09
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