发明名称 |
Process for producing thin oxide film and production apparatus |
摘要 |
In a method of manufacturing oxide thin film by adsorbing or depositing oxide forming starting material on a substrate followed by oxide formation, by using water in a liquid state to manufacture the oxide thin film, the advantages of the ALD method are utilized while resolving the tendency to leave impurities in the oxide film produced that is a drawback thereof, so that oxide thin film can be obtained having a reduced concentration of impurities.
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申请公布号 |
US2004198029(A1) |
申请公布日期 |
2004.10.07 |
申请号 |
US20040485823 |
申请日期 |
2004.02.18 |
申请人 |
YASUDA TETSUJI;NISHIZAWA MASAYASU;YAMASAKI SATOSHI |
发明人 |
YASUDA TETSUJI;NISHIZAWA MASAYASU;YAMASAKI SATOSHI |
分类号 |
C01B13/14;C01B13/32;C01B33/12;C23C8/02;C23C8/16;C23C26/00;C23C30/00;H01L21/314;H01L21/316;H01L29/78;(IPC1-7):H01L21/20 |
主分类号 |
C01B13/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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