Disclosed is a method for the epitaxial deposition of layers, according to which a low-doped epitaxial layer is applied to highly doped areas that are incorporated into a silicon substrate. The aim of the invention is to ensure functionality of the components that are to be produced while effectively preventing autodoping. Said aim is achieved by applying a high-resistance silicon layer to the highly doped areas before the epitaxial layer is applied, the other areas being covered or the high-resistance layer being locally removed from the other areas. The epitaxial layer is then deposited onto the high-resistance silicon layer located above the highly doped areas and onto the silicon layer located outside the highly doped areas. Autodoping of the epitaxial layer is effectively prevented by the high-resistance silicon layer.
