NITRIDE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

A method for manufacturing nitride semiconductor devices comprising a step (A) of preparing a nitride semiconductor substrate to be divided into chip substrates and having device portions to serve as chip substrates after the division and inter-device portions that interconnect the device portions and have an average thickness smaller than the thickness of the device portions, a step (B) of forming a mask layer having a striped opening section on each device portion of the nitride semiconductor substrate, a step (C) of selectively growing a nitride semiconductor layer on the region exposed from the opening section of each mask layer over the top surface of the nitride semiconductor substrate, and a step (D) of cleaving the nitride semiconductor substrate along the inter-device portions and fabricating nitride semiconductor devices having the individually divided chip substrates.