| 摘要 |
<p>A method for producing a silicon sintered compact is characterized by deoxidizing a silicon powder through baking at a temperature within the range of 1,000-1,300˚C under a reduced pressure; then hot-pressing the silicon powder at a temperature within the range of 1,200-1,420˚C at a contact pressure of 200 kgf/cm<2> or higher; and conducting an HIP at a temperature within the range of 1,200-1,420˚C under a pressure of 1,000 atmospheres or higher. With this method, a sintered compact having a high density not less than 99% and a greatly improved strength can be obtained even when the sintered compact is formed as a large-sized rectangular or disk-shaped target having a thickness of 5 mm or more.</p> |
