| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which is capable of forming superior solder bumps with narrow pitch. <P>SOLUTION: An insulating film 16 is formed on the surface of a substrate 10 equipped with electrodes 12; openings 14 are provided to the insulating film 16 at the positions corresponding to the electrodes 12 of the substrate 10; first metal 18 is fed into the openings 14, melted by heating, and solidified; second metal 22 is fed into the openings 14 overlapping with the first metals 18, the first and second metal, 18 and 22, are melted by heating and then solidified; and the insulating film is removed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
