发明名称 SURFACE ACOUSTIC WAVE DEVICE AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To realize a high grade device constitution by reducing effects to be imparted to the film quality of a piezoelectric body thin film in a surface acoustic wave device composed by forming the piezoelectric body thin film on a dielectric substrate via a short-circuit electrode (a base electrode). <P>SOLUTION: A laminated structure of a base electrode layer 102 and the piezoelectric body thin film 103 is provided on the dielectric substrate 101 in the surface acoustic wave device 100. The surface acoustic wave device 100 is provided with an electrode 104 inducing a surface acoustic wave to the piezoelectric body thin film. The base electrode layer has a function to reduce potential variations on the interface of the piezoelectric body thin film, and the base electrode layer is composed of a semiconductor. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004282231(A) 申请公布日期 2004.10.07
申请号 JP20030068342 申请日期 2003.03.13
申请人 SEIKO EPSON CORP 发明人 FURUHATA MAKOTO
分类号 H01L41/09;H01L41/08;H01L41/18;H01L41/22;H01L41/29;H01L41/316;H01L41/39;H03H3/08;H03H9/145;H03H9/25 主分类号 H01L41/09
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