| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting device which can easily be worked and has an excellent function in luminescence. <P>SOLUTION: A conductive substrate 8 is made of iron-nickel alloy, and a conductive adhesive is made of Au-Sn solder 7. The manufacturing method of a semiconductor light emitting device comprises the steps of, laminating GaN based semiconductor layers including light emitting layer on a GaAs (111) A substrate 1, fixing an electrode surface provided on the above-mentioned lamination surface and the conductive substrate with a conductive adhesive, and removing the GaAs (111) A substrate 1. The GaAs (111) A substrate 1 is removed by wet etching by ammonia based etchant. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
