| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a p-type semiconductor layer activating method other than thermal effects. <P>SOLUTION: Impurity in a p-type semiconductor layer is activated by plasma. The gas source of plasma is provided with gas including a VI group element. The p-type semiconductor layer activated by plasma is able to develop a function similar to that of a p-type semiconductor activated by thermal effects by an already known technology. Therefore, it is possible to provide this p-type semiconductor layer activating method other than thermal effects. In this process for activating the p-type semiconductor layer by using plasma, the other parts in the semiconductor structure can be prevented from being affected by plasma, and any side reaction can be prevented from being generated. That is, in the process of the p-type semiconductor layer activation, the other parts in the semiconductor structure can be prevented from being affected more than necessary. Thus, it is possible to provide the p-type semiconductor layer activating method adopting plasma instead of thermal effects. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
