| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To protect a circuit element from electrostatic breakdown and, at the same time, to transmit high-speed signals in a semiconductor circuit. <P>SOLUTION: The semiconductor circuit comprises a protective circuit 12 which discharges the voltage of a prescribed value or higher when the voltage is impressed, a cell 10 containing the circuit element, and a first pad electrode 14 connected to the cell 10 through the protective circuit 12. The circuit also comprises a second pad electrode 16 connected to the cell 10 without passing through the protective circuit 12 and wiring 18 which connects them to each other. The second pad electrode 16 can be constituted in a state where the electrode 16 is covered with an insulating film 22. In this case, an opening 24 is formed in the insulating film 22 to expose the second pad electrode 16. The opening 24 is formed after a process, such as the so-called pre-process, transportation, dicing, mounting work on a lead frame, etc., during which electrostatic breakdown tends to occur ends in a prescribed manufacturing process of the semiconductor circuit. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
