| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent variance in line width of a pattern caused by the density of the pattern during etching. <P>SOLUTION: The method for forming a mask is used to manufacture a semiconductor device comprising a plurality of circuit blocks each having a plurality of kinds of devices arranged in high density. The mask forming apparatus is equipped with a function to control the line width of a pattern considering the line width conversion difference due to dry etching when the pattern is formed in the mask based on CAD data, and also a function to vary the controlling degree of the line width in the pattern for each of the plurality of circuit blocks. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
