| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin injection element and a spin field effect transistor capable of application to a memory and a logic element based on the spin valve effect obtained by injecting carriers spin-polarized from a ferromagnetic substance at normal temperatures. SOLUTION: A hybrid type magnetic substance and a semiconductor spin element include a semiconductor substrate, a source region formed of a magnetic substance on the top surface of the semiconductor substrate, a spin channel region, into which spin-polarized carriers are injected from the source region, and which is formed on the top surface of the semiconductor substrate, and a drain region, in which a spin having passed through the spin channel region is detected, and which is formed of a magnetic substance on the top surface of the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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