发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
摘要 PROBLEM TO BE SOLVED: To improve adhesion properties of a molding resin and a passivation film, and to improve the reliability of a semiconductor device. SOLUTION: A passivation film 19 made of a silicon nitride is formed on an insulating film 11. A metal film 22 made of aluminium or an aluminium alloy is formed over the whole surface on the passivation film 19 except a pad 21 and the separation area 23 of the peripheral of the pad. A molding resin 24 is formed on the metal film 22. The metal film 22 has good adhesive properties to both the passivation film 19 and the molding resin 24, and covers substantially the whole surface of the passivation film 19. Consequently, the adhesive properties of the molding resin 24 and the passivation film 19 can be improved. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004281916(A) 申请公布日期 2004.10.07
申请号 JP20030074153 申请日期 2003.03.18
申请人 SANYO ELECTRIC CO LTD 发明人 SEKIKAWA NOBUYUKI
分类号 H01L23/52;H01L21/3205;(IPC1-7):H01L21/320 主分类号 H01L23/52
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