| 摘要 |
PROBLEM TO BE SOLVED: To grow a single crystal having a low dislocation density in a good yield by preventing that the solid-liquid interface becomes a shape recessed to the melt side when the single crystal is grown by a vertical Bridgman method. SOLUTION: In an apparatus for manufacturing the compound semiconductor single crystal by the vertical Bridgman method, a heat shielding member 4 extending in the vertical direction is interposed between a crucible 2 in which the single crystal is grown and a heater 3, arranged around the crucible 2, in such a manner that the solid-liquid interface K in the crucible 2 is located above the heat shielding member 4. COPYRIGHT: (C)2005,JPO&NCIPI
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