| 摘要 |
In the nitride semiconductor device having a p-type nitride semiconductor layer, an electrode including at least rhodium and iridium is formed on the p-type nitride semiconductor layer. By this construction, an excellent ohmic contact between the electrode and the p-type nitride semiconductor layer and a high reflectivity in the electrode can be obtained, so that the nitride semiconductor device having excellent external quantum efficiency can be provided.
|
