发明名称 |
Method for forming thick copper self-aligned dual damascene |
摘要 |
A method for forming a void free ultra thick dual damascene copper feature providing a semiconductor process wafer comprising via openings formed in a first undoped silicate glass (USG) layer the first USG layer having an overlying a second USG layer formed having a thickness of greater than about 1 micron and an overlying silicon oxynitride BARC layer; forming a trench opening having a width of greater than about 1 micron to encompass one of the via openings; forming a barrier layer to line the dual damascene opening; forming a copper seed layer having a thickness of from about 1000 Angstroms to about 2000 Angstroms; carrying out a multi-step electrochemical deposition (ECD); and, carrying out a two step copper annealing process.
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申请公布号 |
US2004198055(A1) |
申请公布日期 |
2004.10.07 |
申请号 |
US20030407082 |
申请日期 |
2003.04.03 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WANG SUNG-HSIUNG |
分类号 |
H01L21/288;H01L21/302;H01L21/461;H01L21/4763;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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