发明名称 |
Forming a porous dielectric layer |
摘要 |
A dielectric layer is made porous by treating the dielectric material after metal interconnects are formed in or through that layer. The porosity lowers the dielectric constant of the dielectric material. The dielectric material may be subjected to an electron beam or a sonication bath to create the pores. The structure has smooth sidewalls for metal interconnects extending through the dielectric layer.
|
申请公布号 |
US2004195693(A1) |
申请公布日期 |
2004.10.07 |
申请号 |
US20040782329 |
申请日期 |
2004.02.19 |
申请人 |
KLOSTER GRANT M.;O'BRIEN KEVIN P.;BRASK JUSTIN K.;GOODNER MICHAEL D.;BRUNER DONALD |
发明人 |
KLOSTER GRANT M.;O'BRIEN KEVIN P.;BRASK JUSTIN K.;GOODNER MICHAEL D.;BRUNER DONALD |
分类号 |
H01L21/316;H01L21/768;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/316 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|