| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory cell that can increase the writing speed without changing the semiconductor manufacturing process. <P>SOLUTION: The semiconductor manufacturing process comprises a step of forming a first doped region 46, a second doped region 48, and a third doped region 50; a step of forming a control gate electrode 52; a step of forming a floating gate electrode 54; a step of providing a first bias voltage and establishing continuity between the first doped region 46 and the second doped region 48; and a step of providing a second bias voltage, generating a channel current between the second doped region 48 and the third doped region 50, and, further, generating a gate current. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
