| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having resistor with a stable resistance value and to provide a manufacturing method of the same. <P>SOLUTION: A trench 5 is formed on a semiconductor substrate 1 of a resistor forming region. A resistor 9 and low resistor polysilicon regions 11, 11 are formed through an oxide film 7 in the trench 5. An NSG film 23 and a BPSG film 25 are formed on the entire surface of the semiconductor substrate 1. A metal layer 31 is formed on the BPSG film 25 in correspondence with a forming region of the resistor 9. Since the resistor 9 is formed in the trench 5 formed on the semiconductor substrate 1, a contact area between the resistor 9 and an insulating layer on the resistor 9 can be reduced. Further, since the metal layer 31 is provided through the NSG film 23 and the BPSG film 25 on the resistor 9, the entry of the impurity ion, potential, moisture, or hydrogen or the like from the upper layer side than the metal layer 31 to the resistor 9 can be prevented. Consequently, the resistance value of the resistor 9 can be stabilized. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
