| 摘要 |
PROBLEM TO BE SOLVED: To provide a well structure of a high voltage device, which improves the well breakdown voltage, prevents charge-up and latch-up in a substrate to enhance the device performance and reliability, and realizes high integration degree in the device. SOLUTION: The well structure includes a first well formed in the substrate and having a conductivity which is opposite to that of the substrate, a second well formed apart from the first well and having the same conductivity as that of the substrate, a field-stop implant region formed between the first well and the second well with a finite distance apart respectively from the first well and the second well and having the same conductivity as that of the substrate, and a pickup part formed overlapping the field-stop implant region and having the same conductivity as that of the field-stop implant region. COPYRIGHT: (C)2005,JPO&NCIPI
|
