| 摘要 |
PROBLEM TO BE SOLVED: To provide a low dielectric constant film having low permittivity, excellent dielectric stability and high mechanical strengths as compared with those of a conventional insulating film, a method for producing the same and a semiconductor device having the low dielectric constant film. SOLUTION: A composition for the low dielectric constant film comprises a fluorine-noncontaining siloxane resin and a nitrogen-containing component. The fluorine-noncontaining siloxane resin is preferably a mode obtained by polymerizing at least any silane compound of a bifunctional silane compound, a trifunctional silane compound and a tetrafunctional silane compound, a mode in which the nitrogen-containing component is at least one kind selected from a nitrogen-containing compound, a nitrogen-containing oligomer and a nitrogen-containing polymer, a mode, etc., containing a metal-noncontaining surfactant. The low dielectric constant film is formed by a method for producing the low dielectric constant film. The semiconductor device has the low dielectric constant film. COPYRIGHT: (C)2005,JPO&NCIPI
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