| 摘要 |
PROBLEM TO BE SOLVED: To provide a high breakdown voltage semiconductor device which is not required to connect to a protective resistor, is hardly subjected to ON-state dielectric breakdown, and hardly deteriorates its electrostatic breakdown characteristics. SOLUTION: A drain region and a source region are provided in a semiconductor substrate, a first gate insulating film is provided on the surface of the semiconductor substrate, and a gate electrode is provided on the first gate insulating film. Furthermore, a second insulating film is provided with a surface lower than the surface of the semiconductor substrate and thicker than the first gate insulating film divides the first gate insulating film into halve, and comes into contact with the first gate insulating film. The second insulating film is provided on the semiconductor substrate and under the gate electrode. An internal resistance region separate from the source region and the drain region is provided right under the second insulating film inside the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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