发明名称 PRESSURE DETECTOR
摘要 PROBLEM TO BE SOLVED: To provide a pressure detector which can suppress the temperature rise of a semiconductor substrate while its housing is radially reduced. SOLUTION: The pressure detector S1 having a housing 10 containing a semiconductor substrate 30 for outputting an electric signal according to the pressure applied in the thickness direction and a pressure transfer member 20. The housing is composed of a first part 11, a second part 12 having a smaller thermal conductivity than that of the first part 11, and a conductive partition 13 partitioning into the first and second parts 11, 12. The semiconductor substrate 30 housed in the first part 11 has a first electrode conductive to the partition 13 on the front surface, and a second electrode conductive to a lead 40 on the backside. The first and the second electrodes act to output an electric signal when a pressure is applied. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004279151(A) 申请公布日期 2004.10.07
申请号 JP20030069380 申请日期 2003.03.14
申请人 DENSO CORP 发明人 TANAKA HIROAKI
分类号 G01L9/00;G01L23/22;(IPC1-7):G01L9/00 主分类号 G01L9/00
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