Spacer like floating gate formation

摘要

A split-gate flash memory cell having a spacer-like floating gate is disclosed as well as a method of forming the same. This is accomplished by defining a floating area opening in a structure layer over a substrate, and forming polysilicon spacers along the vertical walls of the opening. Then an intergate oxide is formed over the spacer-like floating gates followed by the forming of individual control gates. Thus, a flash memory is formed having two independent cells with their own spacer floating gates and control gates sharing one source with the capability of being shrunk in size much more readily than conventionally possible.