发明名称 Plasma treatment apparatus
摘要 A plasma treatment apparatus for thin-film deposition includes a reactor chamber; a pair of parallel-plate electrodes disposed inside the chamber; and a radio-frequency power supply system used for transmitting radio-frequency power to one of the parallel-plate electrodes via multiple supply points provided on the one of the parallel-electrodes. The radio-frequency power supply system includes a radio-frequency transmission unit which includes an inlet transmission path and multiple branches branched off from the inlet transmission path multiple times. Each branch is connected to the supply point and has a substantially equal characteristic impedance value.
申请公布号 US2004194709(A1) 申请公布日期 2004.10.07
申请号 US20040807528 申请日期 2004.03.23
申请人 ASM JAPAN K.K. 发明人 YAMAGISHI TAKAYUKI;ARAI HIROKI;SATOH KIYOSHI
分类号 H05H1/46;B01J19/08;C23C16/00;C23C16/36;C23C16/40;C23C16/42;C23C16/455;C23C16/509;H01J37/32;H01L21/31;H01L21/316;(IPC1-7):C23C16/00 主分类号 H05H1/46
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