发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device includes: a pair of bit lines; a first sense amplifier coupled to the pair of bit lines; and a first controller, which controls the first sense amplifier. The first sense amplifier comprises a flip-flop circuit having a pair of NMOS transistors and a pair of PMOS transistors; a first transistor connected to a source terminal of the NMOS transistors in the flip-flop circuit; and a second transistor connected to a source terminal of the PMOS transistors in the flip-flop circuit. The first controller comprises a first NOR circuit, comprising input terminals to which a write command signal and a sense amplifier driving signal are supplied and an output terminal connected to a gate of the first transistor.
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申请公布号 |
US2004196716(A1) |
申请公布日期 |
2004.10.07 |
申请号 |
US20030403053 |
申请日期 |
2003.04.01 |
申请人 |
KAWAGOE MASAKUNI;NARUMI AKIHIRO |
发明人 |
KAWAGOE MASAKUNI;NARUMI AKIHIRO |
分类号 |
G11C7/06;G11C11/4091;(IPC1-7):G11C7/00 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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