发明名称 |
LASER BEAM IRRADIATION UNIT, LASER BEAM IRRADIATION METHOD, AND METHOD OF MANUFACTURING LASER BEAM IRRADIATION SYSTEM AND SEMICONDUCTOR DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a laser beam irradiation unit which can constantly perform a kinetic energy of a laser beam for a long time, a laser processing method and a method of manufacturing a semiconductor device. <P>SOLUTION: A laser beam irradiation unit according to the present invention includes: a laser oscillator; plural attenuators; an optical system; a temperature control chamber or a humidity control chamber; a process chamber; and a primary transfer unit. After an attenuator provided between the laser oscillator and the optical system is changed to an attenuator in the humidity control chamber by the primary transfer unit, a laser beam is ejected from the laser oscillator and an energy of the laser beam is attenuated by the attenuator to irradiate the laser beam to an irradiated object. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2004282026(A) |
申请公布日期 |
2004.10.07 |
申请号 |
JP20030430900 |
申请日期 |
2003.12.25 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
TAKAHASHI AYUMI;SHIMOMURA AKIHISA |
分类号 |
H01L51/50;B23K26/00;B23K26/12;B23K101/40;H01L21/20;H01L21/265;H01L21/268;H01L21/336;H01L29/786;H01S3/00;H05B33/14;(IPC1-7):H01L21/268 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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