发明名称 SOLID STATE IMAGE SENSOR AND ITS FABRICATING PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a solid state image sensor in which adhesion is enhanced between a supporting substrate and a semiconductor substrate. SOLUTION: The solid state image sensor comprises a semiconductor substrate 16 on which a semiconductor integrated circuit including a light receiving section generating information charges by receiving light and an information charge transferring section are formed, filter layers 30-1 and 30-2 covering at least a part of the transferring section and filtering the transmitting light, and a pad electrode 14 for leading out the wiring of the semiconductor integrated circuit 32 wherein the filter layers 30-1 and 30-2 are formed while avoiding a region provided with the pad electrode 14. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004281961(A) 申请公布日期 2004.10.07
申请号 JP20030074817 申请日期 2003.03.19
申请人 SANYO ELECTRIC CO LTD 发明人 TAKECHI YOSHIMASA
分类号 H01L27/14;H01L27/148;H04N5/335;H04N5/369;H04N5/372;(IPC1-7):H01L27/14 主分类号 H01L27/14
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