| 摘要 |
PROBLEM TO BE SOLVED: To provide the washing method of a wafer which can eliminate surely inorganic or organic contaminants adhered to a wafer and, in particular, particulate-like contaminants adhered to the wafer by using small chemical dosage. SOLUTION: The washing method of a wafer is provided with an oxide film forming process wherein oxidative gas is brought into contact with the wafer, a wafer surface layer is oxidized and an oxide film is formed on a wafer surface (step S<SB>1</SB>); a water vapor contact process for bringing the wafer into contact with water vapor (step S<SB>2</SB>); an oxide film etching process wherein the wafer is brought into contact with etching gas, and the oxide film on a wafer surface is etched and eliminated (step S<SB>3</SB>); a rinse treatment process (step S<SB>4</SB>); and dry treatment process (steps S<SB>5</SB>, S<SB>6</SB>). COPYRIGHT: (C)2005,JPO&NCIPI
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