| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which parasitic capacitance can be reduced at the gate electrode part, and to provide its fabricating method. SOLUTION: The semiconductor device comprises a body 1C provided on a box 1B, a gate oxide film 4 provided on the body 1C, a gate electrode part 2 provided on the gate oxide film 4, a source/drain diffusion layer provided on the body 1C in a specified region on the opposite sides of the gate electrode part 2, an oxide film pattern 10 provided in the boundary part of the source/drain diffusion layer and the body 1C on the opposite sides of the gate electrode part 2, and silicides 15A and 15B provided, respectively, on the source/drain diffusion layer exposed from below the oxide film pattern 10 and on the body 1C, and silicide 16. COPYRIGHT: (C)2005,JPO&NCIPI
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