Memory-cell filament electrodes and methods

摘要

A non-volatile memory cell of the type having a control element and a storage element has a storage element including a first material characterized by having a phase change in a predetermined temperature range, a second material having a negative differential resistance characteristic, the second material being in contact with the first material and being electrically coupled to the control element. The control element is operated to induce filamentary conduction through the second material such that the filamentary conduction causes the temperature of at least a portion of the first material to reach the predetermined temperature range, whereby a phase change occurs in at least a portion of the first material.